Kioxia Holdings, the renowned Japanese chipmaker, unveiled its groundbreaking 10th-generation NAND flash memory, marking a significant milestone in data storage technology. Announced on Thursday in Tokyo, this latest development features an impressive 332-layer architecture, promising to redefine power efficiency and data transfer speeds. Developed in collaboration with U.S. partner Sandisk, this innovation is poised to capture the attention of AI data centers worldwide.
This advanced NAND flash memory technology significantly boosts bit density by 59% compared to the 8th-generation, 218-layer models. Such an enhancement not only maximizes storage capacity but also ensures more efficient energy consumption. The new technology reduces electricity use, enhancing power efficiency by 10% for data input and an impressive 34% for output, making it an attractive option for energy-conscious data centers.
Kioxia's latest flash memory also boasts a 33% faster interface speed than its predecessors. This significant improvement in data transfer rates is expected to meet the burgeoning demand from artificial intelligence data centers, which require robust and efficient storage solutions to handle vast amounts of data. The company anticipates strong interest from these sectors due to the enhanced capabilities of the new technology.
Currently in mass production, the 10th-generation NAND flash memory exemplifies Kioxia's commitment to innovation and leadership in the field. By leveraging their expertise and partnership with Sandisk, Kioxia has successfully pushed the boundaries of what is possible in NAND flash memory technology.
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